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  Datasheet File OCR Text:
 Bulletin I0103J 10/01
IR390DM..CCB SERIES
STANDARD RECOVERY DIODES
Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part:
Rectangular 390 X 270 mils 4" 800 to 1200 V Glassivated MOAT 85EPS Series
Major Ratings and Characteristics
Parameters
VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range
Units
1.15 V 800 to 1200 V
Test Conditions
TJ = 25C, I F = 85 A TJ = 25C, I RRM = 100 A
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 390 x 270 mils (9.91x6.86 mm) - see drawing 100 mm, with std. < 110 > flat 300 m, 10 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination
www.irf.com
1
IR390DM..CCB Series
Bulletin I0103J 10/01
Ordering Information Table
Device Code
IR
1
390
2
D
3
M
4
12
5
C
6
CB
7
1 2 3 4 5 6 7
-
International Rectifier Device Chip Dimension in Mils Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box)
Available Class 08 = 800 V 10 = 1000V 12 = 1200 V
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
2
www.irf.com
IR390DM..CCB Series
Bulletin I0103J 10/01
Wafer Layout
TOP VIEW N 80 Basic Cells
All dimensions are in millimeters
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